Thin film transistor array panel and method of manufacturing the same

ABSTRACT

A thin film transistor (“TFT”) array panel is provided. The TFT array panel includes an insulation substrate, a gate line formed on the insulation substrate and including a gate electrode, a data line insulated from and intersecting the gate line, and including a source electrode, a drain electrode opposite to the source electrode on the gate line, and a semiconductor formed in a layer between the data line and the gate line, and having a protruding portion extending below the drain electrode, wherein a portion of the semiconductor extending towards the drain electrode, from an area occupied by the data line, is positioned within an occupying area of the gate line including the gate electrode.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser.No. 13/535,553, filed on Jun. 28, 2012, which claims priority to adivisional application of U.S. application Ser. No. 11/449,960, filedJun. 9, 2006, which claims priority to and the benefit of Korean PatentApplication No. 10-2005-0087669 filed on Sep. 21, 2005; and KoreanPatent Application No. 10-2005-0083188 filed on Sep. 7, 2005; and KoreanPatent Application No. 10-2005-0049341 filed on Jun. 9, 2005, the entirecontents of each being incorporated herein by reference.

BACKGROUND OF THE INVENTION

(a) Field of the Invention

The present invention relates to a thin film transistor (“TFT”) arraypanel and a method of manufacturing the TFT array panel. Moreparticularly, the present invention relates to a TFT array panel capableof preventing generation of leakage current and a method ofmanufacturing the TFT array panel.

(b) Description of the Related Art

The thin film transistor (“TFT”) array panel is used as a circuit boardfor independently driving each pixel in a liquid crystal display (“LCD”)or an organic electro luminescence (“EL”) display, etc. The TFT arraypanel is provided with gate lines for transferring a scanning signal anddata lines for transferring an image signal and includes TFTs that areconnected to the gate lines and the data lines, pixel electrodes thatare connected to the TFTs, a gate insulating layer that covers the gatelines to insulate the gate lines, and a passivation layer that coversthe TFTs and the data lines to insulate the TFTs and the data lines.Each TFT includes a gate electrode, which is a part of a gate line, asemiconductor for forming a channel, a drain electrode and a sourceelectrode, which is part of the data line, a gate insulating layer, anda passivation layer, etc. The TFT is a switching element fortransferring or intercepting an image signal that is passed through thedata line to the pixel electrode depending on a scanning signal that ispassed through the gate line.

Several photolithography processes are required to manufacture the TFTarray panel. However, as the number of the photolithography processesincreases, a manufacturing process becomes increasingly complicated anda manufacturing cost also increases.

BRIEF SUMMARY OF THE INVENTION

The present invention provides a thin film transistor (“TFT”) arraypanel having advantages of little to no current (leakage current) when aTFT is turned off. A leakage current is generated due to characteristicsof an element itself or external factors. Particularly, when asemiconductor layer constituting the TFT receives light, a leakagecurrent greatly increases by generating of photoelectrons. Thus, tosolve this problem, exemplary embodiments of the present invention covera semiconductor constituting the TFT with a gate metal.

Also, exemplary embodiments of the present invention provide for amethod that reduces the number of photolithography processes that arerequired for manufacturing the TFT array panel.

An exemplary embodiment of the present invention provides a TFT arraypanel including an insulation substrate, a gate line formed on theinsulation substrate and including a gate electrode, a data lineinsulated from and intersecting the gate line, and including a sourceelectrode, a drain electrode disposed opposite to the source electrodeon the gate line, and a semiconductor formed in a layer between the dataline and the gate line, the semiconductor having a protruding portionextending below the drain electrode, wherein a portion of thesemiconductor extending towards the drain electrode, from an areaoccupied by the data line, is positioned within an occupying area of thegate line including the gate electrode.

The drain electrode may be positioned within an occupying area of thesemiconductor, and the protruding portion of the semiconductor may bepositioned within the occupying area of the gate line including the gateelectrode.

The TFT array panel may further include a pixel electrode connected tothe drain electrode and the pixel electrode may have a branch portionextended toward the drain electrode and the branch portion may beconnected to the drain electrode, such that only the branch portion ofthe pixel electrode may overlap with the gate line.

The pixel electrode may come in contact with an upper surface and a sidesurface of the drain electrode and the pixel electrode may come incontact with the semiconductor.

A combined outer periphery of the drain electrode, source electrode, anda channel portion between the drain electrode and the source electrodemay match an outer periphery of the protruding portion of thesemiconductor.

The protruding portion of the semiconductor may be blocked from lightpenetrating the insulation substrate by the gate line including the gateelectrode.

Another exemplary embodiment of the present invention provides a TFTarray panel including an insulation substrate, a gate line formed on theinsulation substrate and including a gate electrode, a gate insulatinglayer formed on the gate line, a semiconductor stripe formed on the gateinsulating layer and having a protruding portion, a data line formed onthe semiconductor stripe, and intersecting the gate line, and includinga source electrode, a drain electrode formed on a protruding portion ofthe semiconductor stripe, a passivation layer formed on the data lineand the drain electrode and having a contact hole exposing the drainelectrode, and a pixel electrode formed on the passivation layer andconnecting to the drain electrode through the contact hole, wherein aportion of the semiconductor stripe extending toward the drainelectrode, from an area occupied by the data line, is positioned withinan occupying area of the gate line including the gate electrode.

The drain electrode may be positioned within an occupying area of thesemiconductor stripe, and the protruding portion of the semiconductorstripe may be positioned within an occupying area of the gate lineincluding the gate electrode.

The pixel electrode may have a branch portion extended toward the drainelectrode, the branch portion may be connected to the drain electrode,and only the branch portion of the pixel electrode may overlap with thegate line.

The contact hole may expose the drain electrode and portions of thesemiconductor stripe around the drain electrode, and the pixel electrodemay come in contact with an upper surface and a side surface of thedrain electrode exposed through the contact hole, and may further comein contact with the portions of the semiconductor stripe that areexposed through the contact hole.

The pixel electrode may have a branch portion, the branch portion may beconnected to the drain electrode and the semiconductor, and only some ofthe portions of the semiconductor stripe exposed through the contacthole may be covered with the pixel electrode.

A combined outer periphery of the drain electrode, source electrode, anda channel portion between the drain electrode and the source electrodemay match an outer periphery of the protruding portion of thesemiconductor stripe.

The protruding portion of the semiconductor stripe may be blocked fromlight penetrating the insulation substrate by the gate line includingthe gate electrode.

Another exemplary embodiment of the present invention provides a methodof manufacturing a thin film transistor array panel including forming agate line and a gate electrode on an insulation substrate, forming asemiconductor layer and a data metal layer on the gate line and gateelectrode on the insulation substrate, and forming a semiconductorstripe and a protruding portion from the semiconductor layer and a dataline, source electrode, and drain electrode from the data metal layerusing one mask, wherein forming the semiconductor stripe and protrudingportion may include forming the protruding portion within an areaoccupied by the gate line and gate electrode.

The method may further include forming an ohmic contact layer betweenthe semiconductor layer and the data metal layer, and forming an ohmiccontact pattern from the ohmic contact layer using the one mask.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing exemplary embodiments thereofwith reference to the accompanying drawings, in which:

FIG. 1 is a layout view of an exemplary thin film transistor (“TFT”)array panel according to an exemplary embodiment of the presentinvention;

FIGS. 2 and 3 are cross-sectional views of the exemplary TFT array paneltaken along lines II-II and III-III of FIG. 1;

FIG. 4 is a layout view of an exemplary TFT array panel in a firstexemplary step of manufacturing the exemplary ITT array panel shown inFIGS. 1 to 3;

FIGS. 5A and 5B are cross-sectional views of the exemplary TFT arraypanel taken along lines VA-VA and VB-VB of FIG. 4;

FIGS. 6A and 6B are cross-sectional views of the exemplary TFT arraypanel taken along lines VA-VA and VB-VB of FIG. 4 and arecross-sectional views of the exemplary ITT array panel in an exemplarystep subsequent to the exemplary step shown in FIGS. 5A and 5B;

FIG. 7 is a layout view of the exemplary TFT array panel in an exemplarystep subsequent to the exemplary step shown in FIGS. 6A and 6B;

FIGS. 8A and 8B are cross-sectional views of the exemplary TFT arraypanel taken along lines VIIIA-VIIIA and VIIIB-VIIIB of FIG. 7;

FIGS. 9A, 10A, and 11A and FIGS. 9B, 10B, and 11B are cross-sectionalviews of the exemplary TFT array panel taken along lines VIIIA-VIIIA andVIIIB-VIIIB of FIG. 7 and illustrate exemplary steps subsequent to theexemplary step shown in FIGS. 8A and 8B;

FIGS. 12A and 12B are cross-sectional views of an exemplary TFT arraypanel in an exemplary step subsequent to the exemplary step shown inFIGS. 11A and 11B;

FIG. 13 is a layout view of an exemplary TFT array panel according toanother exemplary embodiment of the present invention;

FIG. 14 is a view illustrating an exemplary light mask pattern for usewhen manufacturing the exemplary TFT array panel shown in FIG. 13;

FIG. 15 is a layout view of an exemplary TFT array panel according toanother exemplary embodiment of the present invention;

FIG. 16 is a view illustrating an exemplary light mask pattern for usewhen manufacturing the exemplary TFT array panel shown in FIG. 15;

FIG. 17 is a layout view of an exemplary TFT array panel according toanother exemplary embodiment of the present invention; and,

FIG. 18 is a cross-sectional view of the exemplary TFT array panel takenalong line XVIII-XVIII of FIG. 17.

DETAILED DESCRIPTION OF THE INVENTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. As those skilled in the art would realize,the described embodiments may be modified in various different ways, allwithout departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc.are exaggerated for clarity. Like reference numerals designate likeelements throughout the specification. It will be understood that whenan element such as a layer, film, region or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. In contrast, when an elementis referred to as being “directly on” another element, there are nointervening elements present. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of the present invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Embodiments of the present invention are described herein with referenceto cross section illustrations that are schematic illustrations ofidealized embodiments of the present invention. As such, variations fromthe shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,embodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, a region illustrated or described as flatmay, typically, have rough and/or nonlinear features. Moreover, sharpangles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present invention.

A thin film transistor (“TFT”) array panel for a liquid crystal display(“LCD”) according to exemplary embodiments of the present invention willnow be described.

FIG. 1 is a layout view of an exemplary TFT array panel according to anexemplary embodiment of the present invention and FIGS. 2 and 3 arecross-sectional views of the exemplary TFT array panel taken along linesII-II and III-III of FIG. 1.

As shown in FIGS. 1 to 3, in a layered structure of the TFT array panelfor an LCD according to an exemplary embodiment of the presentinvention, on an insulation substrate 110, a plurality of gate lines121, extending in a first direction, including an extension portion 129,having an extended width in order to connect an outside apparatus, and aplurality of gate electrodes 124 is formed, and a plurality of storageelectrode lines 131, also extending in the first direction, that iselectrically separated from the gate lines 121 is formed.

Each gate line 121 and storage electrode line 131 includes two layers,i.e., lower layers 121 p, 124 p, and 131 p and upper layers 121 q, 124q, and 131 q having a different physical property. The upper layer 121 qof the gate line 121, the upper layer 124 q of the gate electrode 124,and the upper layer 131 q of the storage electrode line 131 are made ofa metal having low resistivity, for example, aluminum metals such asaluminum (Al) or aluminum alloy to reduce a delay or a voltage drop ofthe gate signal. Alternatively, the lower layer 121 p of the gate line121, the lower layer 124 p of the gate electrode 124, and the lowerlayer 131 p of the storage electrode line 131 are made of materials, forexample, molybdenum (Mo), molybdenum alloy, chromium (Cr), tantalum(Ta), titanium (Ti), etc. having good physical, chemical, and electricalcontact characteristics with other materials, particularly, indium tinoxide (“ITO”) and indium zinc oxide (“IZO”). A combination of the lowerlayers 121 p, 124 p, 131 p and the upper layers 121 q, 124 q, and 131 qincludes, for example, chromium/aluminum-neodymium (Nd) alloy.

The storage electrode line 131, including the lower layer 131 p and theupper layer 131 q, receives a predetermined voltage such as a commonvoltage from the outside. When a sustain capacity generated byoverlapping of a pixel electrode 190 and the gate line 121 issufficient, the storage electrode line 131 may be omitted. In this case,a storage capacitor conductor 177, as will be further described below,may also be omitted.

Each side surface of the lower layers 121 p, 124 p, and 131 p and theupper layers 121 q, 124 q, and 131 q of the gate line 121, the gateelectrode 124, and the storage electrode line 131 are inclined and aninclination angle thereof is about 30° to about 80° with respect to asurface of the insulation substrate 110.

A gate insulating layer 140 that is made of, for example, siliconnitride, is formed on the gate line 121, the gate electrode 124, thestorage electrode line 131, and exposed portions of the insulationsubstrate 110.

In the upper part of the gate insulating layer 140, a plurality ofsemiconductor stripes 151 that is made of hydrogenated amorphous silicon(“a-Si”) or the like is formed. The semiconductor stripes 151 are mainlyextended in a vertical direction, a second direction substantiallyperpendicular to the first direction, and a plurality of protrudingportions 154 for covering the gate electrodes 124 by extending in abasin form from the semiconductor stripes 151 is formed. Furthermore,semiconductor islands 157 for covering a part of the storage electrodeline 131 are formed.

The protruding portion 154 of the semiconductor stripe 151 is overlappedwith the gate electrode 124 and is formed to be provided within anoccupying area of the gate line 121 including the gate electrode 124among surfaces of the insulation substrate 110. In other words, theprotruding portion 154 is provided within an area occupied by the gateelectrode 124. That is, an edge of the protruding portion 154 of thesemiconductor stripe 151 has a footprint provided within an area that isenclosed with an edge line of the gate line 121 including the gateelectrode 124.

Therefore, when viewed from the lower side of the insulation substrate110, the protruding portion 154 is not exposed because it is covered bythe gate electrode 124 and the gate line 121.

In the upper part of the semiconductor 151, in a layer overlapping thesemiconductor 151, a plurality of ohmic contact stripes and islands 161,165, and 167 that are made of a material such as n+ hydrogenated a-Si inwhich silicide or n-type impurity is doped with a high concentration areformed. The ohmic contact stripes (contact member) 161 has a pluralityof protruding portions 163, and the protruding portions 163 and theohmic contact islands (contact member) 165 are formed in pairs, witheach pair positioned on a protruding portion 154 of the semiconductorstripe 151. On the other hand, the ohmic contact island (contact member)167 is formed on the semiconductor island 157.

Side surfaces of the semiconductors 151 and 157 and the ohmic contacts161, 165, and 167 are also inclined with respect to the insulationsubstrate 110 and an inclination angle thereof is about 30° to about80°.

A plurality of data lines 171, a plurality of drain electrodes 175, anda plurality of storage capacitor conductors 177 are formed on the ohmiccontacts 161, 165, and 167 and on the gate insulating layer 140.

Each data line 171 is mainly extended in a vertical direction, thesecond direction, to intersect the gate lines 121 and transfers a datavoltage. Each data line 171 includes an extension portion 179 having awide width so as to connect to an outside apparatus. Most of each dataline 171 is positioned within the display area, but the extensionportion 179 of the data line 171 is positioned in a peripheral area. Aplurality of branches extended in a branch shape from each data line 171and towards the drain electrode 175 forms a source electrode 173. A pairof a source electrode 173 and a drain electrode 175 is separated fromeach other and is positioned on an opposite side of a gate electrode124.

Here, the data line 171, the drain electrode 175, and the storagecapacitor conductor 177 are completely positioned on an upper surface ofthe ohmic contacts 161, 165, and 167. Particularly, the drain electrode175 has substantially the same plane shape as the ohmic contact island165 that is completely positioned on the protruding portion 154 of thesemiconductor stripe 151. Therefore, an edge of the drain electrode 175is provided within an area that is enclosed with an edge line of theprotruding portion 154 of the semiconductor stripe 151. That is, aperipheral projection or footprint of the drain electrode 175 fallswithin a periphery of the protruding portion 154 of the semiconductorstripe 151. When viewed from the lower side of the insulation substrate110, the drain electrode 175 is not exposed since it is covered by thegate electrode 124 and the gate line 121.

The gate electrode 124, the source electrode 173, the drain electrode175, and the protruding portion 154 of the semiconductor stripe 151constitutes a TFT and a channel of the TFT is formed in the protrudingportion 154 between the source electrode 173 and the drain electrode175.

The storage capacitor conductor 177 is overlapped with a portion of thestorage electrode line 131 and is formed on the semiconductor island 157and the ohmic contact island 167.

The data line 171 including source electrode 173 and extension portion179, the drain electrode 175, and the storage capacitor conductor 177may include two conductive layers, i.e., lower layers 171 p, 173 p, 175p, 177 p, and 179 p and upper layers 171 q, 173 q, 175 q, 177 q, 179 qwhich have a different physical property.

It is preferable that the upper layers 171 q, 173 q, 175 q, 177 q, 179 qare made of metals having low resistivity, for example, aluminum metals,silver metals, copper metals, or so on to reduce a signal delay or avoltage drop and the lower layers 171 p, 173 p, 175 p, 177 p, 179 p aremade of refractory metals such as molybdenum, chromium, tantalum, andtitanium or their alloy. A good example of the combination includes achromium or molybdenum (alloy) lower layer and an aluminum (alloy) upperlayer and some of the upper layer 175 q of the drain electrode 175 andthe upper layer 179 q of the extension portion 179 of the data line 171is removed to expose the lower layers 175 p and 179 p. However, the dataline 171, the drain electrode 175, and the storage capacitor conductor177 may have a single layer structure that is made of theabove-mentioned several materials and may be made of other variousmetals or conductors.

Side surfaces of the lower layer 171 p, 173 p, 175 p, 177 p, and 179 pand the upper layers 171 q, 173 q, 175 q, 177 q, and 179 q of the dataline 171, the source electrode 173, the drain electrode 175, the storagecapacitor conductor 177, and the extension portion 179 are inclined andan inclination angle with respect to the insulation substrate 110thereof is about 30° to about 80°, as in the gate line 121 and thestorage electrode line 131.

The ohmic contacts 161, 165, and 167 are provided between the lowersemiconductors 151 and 157 and the upper data line 171, drain electrode175, and storage capacitor conductor 177 and perform a function oflowering contact resistance. The semiconductor stripe 151 has a portion,namely a portion of the protruding portion 154, that is exposed withoutbeing covered by the data line 171 and the drain electrode 175 and aportion between the source electrode 173 and the drain electrode 175,and the semiconductor island 157 is provided below the ohmic contact 167which is below the storage capacitor conductor 177.

A passivation layer 180 that is made of an organic material havingexcellent planarization characteristics and photosensitivity, aninsulating material having a low dielectric constant of 4.0 or less suchas a-Si:C:O, a-Si:O:F, that is formed by plasma enhanced chemical vapordeposition (“PECVD”), silicon nitride, which is an inorganic material,or so on is formed on an exposed portion of the semiconductor stripe151, the data line 171, the drain electrode 175, the storage capacitorconductor 177, and exposed portions of the gate insulating layer 140.

In the passivation layer 180, a plurality of contact holes 185, 187, and182 for exposing lower layers 175 p, 177 p, and 179 p of each of thedrain electrode 175, the storage capacitor conductor 177, and theextension portion 179 of the data line 171 are formed. In thepassivation layer 180 and the gate insulating layer 140, a plurality ofcontact holes 181 for exposing the lower layer 129 p of the extensionportion 129 of each gate line 121 is formed.

On the passivation layer 180, a plurality of pixel electrodes 190 and aplurality of contact assistants 81 and 82 are formed.

The pixel electrode 190 and the contact assistants 81 and 82 may be madeof a transparent conductive material such as, but not limited to ITO orIZO.

The pixel electrode 190 is physically and electrically connected to thedrain electrode 175 and the storage capacitor conductor 177 through thecontact holes 185 and 187 to receive a data voltage from the drainelectrode 175 and transfer a data voltage to the conductor 177.

The pixel electrode 190 to which a data voltage is applied and a commonelectrode of an opposing panel that receives a common voltage form anelectric field, thereby rearranging liquid crystal molecules of a liquidcrystal layer between the common electrode of the opposing panel and thepixel electrodes of the TFT array panel.

Furthermore, the pixel electrode 190 and the common electrode constitutea capacitor, thereby maintaining an applied voltage even after the TFTis turned off. In order to strengthen voltage sustain ability, anothercapacitor is connected in parallel to the liquid crystal capacitor andreferred to as a “storage capacitor.”

The storage capacitor is manufactured by overlapping or so on of thepixel electrode 190 and the storage electrode line 131 and increases asustain capacity by making a distance between the storage capacitorconductor 177 and the passivation layer 180 to be small by providing thestorage capacitor conductor 177 under the passivation layer 180.

The pixel electrode 190 is also overlapped with a neighboring gate line121 and data line 171 to increase an aperture ratio, but alternativelythey may not be overlapped.

Contact assistants 81 and 82 are connected to the extension portion 129of the gate line 121 and the extension portion 179 of the data line 171,respectively through contact holes 181 and 182. The contact assistants81 and 82 supplement adhesion between each of the extension portions 129and 179 of the gate line 121 and the data line 171 and an outsideapparatus and protect the extension portions 129 and 179.

As described above, if the protruding portion 154 of the semiconductorstripe 151 is formed to be provided within an occupying area of the gateelectrode 124 and the gate line 121, backlight from a backlight assemblyis intercepted by the gate electrode 124 and the gate line 121 and thusdoes not reach the protruding portion 154. Therefore, a leakage current,which is induced due to photoelectrons in a state where the TFT isturned off, is prevented from being generated.

Although the protruding portion 154 is illustrated as being positionedentirely within a peripheral projection of the gate electrode 124 andgate line 121, in an alternative embodiment, the entire protrudingportion 154 of the semiconductor stripe 151 is not necessarily providedwithin an occupying area of the gate line 121 including the gateelectrode 124, but it is preferable that a channel portion which isdisposed between the source electrode 173 and the drain electrode 175, aportion disposed under the drain electrode 175, and portions adjacent tothe portion disposed under the drain electrode 175 are formed to bedisposed within the occupying area of the gate line 121 including thegate electrode 124. That is, it is preferable that at least the portionof the semiconductor that is positioned toward the drain electrode 175from the data line 171 is formed to be disposed within the occupyingarea of the gate line 121 including the gate electrode 124.

Now, an exemplary method of manufacturing the TFT array panel for theLCD shown in FIGS. 1, 2, and 3 according to an exemplary embodiment ofthe present invention will be described with reference to FIGS. 4 to 12Band FIGS. 1, 2, and 3.

FIG. 4 is a layout view of an exemplary TFT array panel in an exemplaryfirst step of manufacturing the exemplary TFT array panel shown in FIGS.1 to 3. FIGS. 5A and 5B are cross-sectional views of the exemplary ITTarray panel taken along lines VA-VA and VB-VB of FIG. 4. FIGS. 6A and 6Bare cross-sectional views of the exemplary TFT array panel taken alonglines VA-VA and VB-VB of FIG. 4 and are cross-sectional views in anexemplary step subsequent to the exemplary step shown in FIGS. 5A and5B. FIG. 7 is a layout view of the exemplary ITT array panel in anexemplary step subsequent to the exemplary step shown in FIGS. 6A and6B. FIGS. 8A and 8B are cross-sectional views of the exemplary TFT arraypanel taken along lines VIIIA-VIIIA and VIIIB-VIIIB of FIG. 7. FIGS. 9A,10A, and 11A and FIGS. 9B, 10B, and 11B are cross-sectional views of theexemplary TFT array panel taken along lines VIIIA-VIIIA and VIIIB-VIIIBof FIG. 7 and illustrate exemplary steps subsequent to the exemplarystep shown in FIGS. 8A and 8B. FIGS. 12A and 12B are cross-sectionalviews of the exemplary TFT array panel in an exemplary step subsequentto the exemplary step shown in FIGS. 11A and 11B.

First, two metal layers, i.e., a lower metal film and an upper metalfilm are sequentially stacked by sputtering on the insulation substrate110 that is made of transparent glass, plastic, etc. In an exemplaryembodiment, the upper metal layer is made of aluminum metals such asAl—Nd alloy and has a thickness of about 2,500 Å. An Al—Nd sputteringtarget preferably includes Nd of 2 atm %.

As shown in FIGS. 4, 5A, and 5B, by sequentially patterning the uppermetal film and the lower metal film, the gate line 121s, each includinga plurality of gate electrodes 124, are formed and a plurality ofstorage electrode lines 131, that are electrically separated from thegate lines 121, are formed.

Next, as shown in FIGS. 6A and 6B, a gate insulating layer 140, anintrinsic amorphous silicon layer 150, and an impurity amorphous siliconlayer 160, that are made, for example, of silicon nitride arecontinuously stacked, then two metal layers 170, i.e., a lower layer 170p and an upper layer 170 q are sequentially stacked by sputtering, andthen a photosensitive film 210 is coated thereon. Thereafter, light isirradiated in the photosensitive film 210 through a light mask and thenthe photosensitive film 210 is developed. As shown in FIGS. 8A and 8B, athickness of the developed photosensitive film varies depending on aposition thereof. In the illustrated embodiment, a channel portion C, asshown in FIG. 8B, includes a first portion 214 of the photosensitivefilm patterns 212 and 214 that is positioned between locationscorresponding to the source electrode 173 and the drain electrode 175and is formed to have a smaller thickness than a second portion 212 ofthe photosensitive film patterns 212 and 214 that is positioned in aportion A in which a data line 171 will be formed. Photosensitive filmsof the remaining portions B are removed. At this time, a ratio of athickness of the photosensitive film 214 remaining in the channelportion C and a thickness of the photosensitive film 212 remaining inthe portions A should be differently set depending on a processcondition in an etching process as will be further described below, but,in one exemplary embodiment, a thickness of the first portion 214 is setto ½ or less than that of the second portion 212.

There are several methods of changing a thickness of the photosensitivefilm depending on a position and the methods include, for example, amethod of providing a transparent region, a light blocking region, and atranslucent region in an exposure mask. A slit pattern, a latticepattern, or a thin film having middle transmittance or a middlethickness may be provided in the translucent region. When the slitpattern is used, it is preferable that a slit width or a space betweenslits is smaller than resolution of a light exposure for use in apicture process. Another example is to use a photosensitive film thatcan reflow. That is, after forming a photosensitive film that can reflowwith a normal mask having only both of a transparent region and a lightblocking region, a thin portion is formed by reflowing the formedphotosensitive film in a region in which the photosensitive film doesnot remain.

Thereafter, an etching process for photosensitive film patterns 212 and214 and the lower films is performed. At this time, the data line 171and the lower films should remain in portion A, only the semiconductorshould remain in the channel portion C, and the gate insulating layer140 should be exposed in the remaining portion B.

First, as shown in FIGS. 9A and 9B, the lower ohmic contact layer 160 isexposed by removing the exposed conductor in the remaining portion B. Inthis process, both dry and wet etching methods can be used and at thistime, it is preferable that etching is performed under a condition thatthe conductor is etched and the photosensitive films 212 and 214 arealmost not etched. However, it is difficult to perform the dry etchingunder a condition of etching only a conductor and not etchingphotosensitive films 212 and 214 and thus the dry etching can bepreformed under a condition of etching both of the conductor and thephotosensitive film patterns 212 and 214. In this case, the firstportion 214 is removed and the lower conductor is not exposed by makinga thickness of the first portion 214 to be larger than when a wetetching process is performed.

In this way, as shown in FIGS. 9A and 9B, the channel portion C and onlya conductor of the A region, i.e., a source/drain conductor 178including upper and lower layers 178 q, 178 p and a storage capacitorconductor 177 including upper and lower layers 177 q, 177 p remain,conductors of other portions are all removed, and thus the lower ohmiccontact layer 160 is exposed. At this time, the source and drainelectrodes 173 and 175 are not separated as in FIGS. 1 to 3, but areinstead connected in the source/drain conductor 178.

Next, as shown in FIGS. 10A and 10B, the exposed ohmic contact layer 160of portion B, the lower semiconductor layer 150, and the first portion214 of the photosensitive film are simultaneously removed with a dryetching method. At this time, etching should be preformed under acondition that the photosensitive films 212 and 214, the ohmic contactlayer 160, and the semiconductor 150 are simultaneously etched and thegate insulating layer 140 is not etched. Particularly, it is preferablethat the etching is performed under a condition that an etching ratio ofthe photosensitive films 212 and 214 and the semiconductor 150 is almostequal. For example, two films can be etched in an almost equal thicknesswhen a mixed gas of SF6 and HCl or a mixed gas of SF6 and O2 is used.When an etching ratio of the photosensitive films 212 and 214 and thesemiconductor layer 150 is equal, a thickness of the first portion 214should be equal to or less than the sum of thicknesses of thesemiconductor layer 150 and the ohmic contact layer 160.

In this way, as shown in FIGS. 10A and 10B, the first portion 214 of thechannel portion C is removed to expose the source/drain conductor 178.On the other hand, the second portion 212 of the portion A is alsoetched and thus a thickness thereof becomes thinner.

Next, photosensitive film dregs remaining in the surface of thesource/drain conductor 178 of the channel portion C are removed throughan ashing process.

Next, as shown in FIGS. 11A and 11B, the source/drain conductor 178 andthe lower ohmic contacts 163 and 165 of the channel portion C are etchedand any remaining particles are removed. At this time, only dry etchingmay be performed for all of the source/drain conductor 178 and the ohmiccontacts 163 and 165, or alternatively wet etching may be performed forthe source/drain conductor 178 and dry etching may be performed for theohmic contacts 163 and 165. In a case of the former, it is preferable toperform the etching under a condition that an etching selection ratio ofthe source/drain conductor 178 and the ohmic contacts 163 and 165 islarge. This is because it is difficult to find an ending point of theetching when an etching selection ratio is not large, whereby it is noteasy to adjust a thickness of the semiconductor remaining in the channelportion C.

In a case of the latter in which wet etching and dry etching arealternately performed, a side surface of the source/drain conductor 178in which wet etching is performed is etched, but the ohmic contacts 163and 165 in which dry etching is performed are almost not etched, wherebya step shape is manufactured.

Etching gases using for etching the ohmic contacts 163 and 165 and theprotruding portion of the semiconductor line 154 include, for example, amixed gas of CF4 and HCl or a mixed gas CF4 and O2, and when CF4 and O2are used, the protruding portion 154 of the semiconductor line 151remains in a uniform thickness.

At this time, as shown in FIG. 11B, when some of the protruding portion154 of the semiconductor line 151 is removed, a thickness thereof may besmall, and it is preferable to have a thick photosensitive film patternso that the lower data line is not exposed when the second portion 212of the photosensitive film pattern is etched.

In this way, the source electrode 173 and the drain electrode 175 areseparated, thereby completing the data line 171 and the lower ohmiccontacts 163 and 165.

Finally, the second portion 212 of the photosensitive film remaining inthe portion A is removed. However, in an alternative embodiment, thesecond portion 212 may be removed before the lower ohmic contacts 163and 165 are removed after the source/drain conductor 178 of the channelportion C is removed.

As described above, wet etching and dry etching may be alternatelyperformed or only dry etching may be performed. In a case of the latter,because only one kind of etching process is performed, the process isrelatively simple, but it may be difficult to find a proper etchingcondition. However, in a case of the former, it is relatively easy tofind an etching condition, but the process is troublesome, compared tothe latter.

Next, as shown in FIGS. 12A and 12B, a passivation layer 180 is formedby growing silicon nitride, a-Si:C:O film, or a-Si:O:F film with achemical vapor deposition (“CVD”) method or coating an organic insulatorlayer on the resultant structure.

Next, contact holes 185, 181, 182, and 187 for exposing each of thedrain electrode 175, the extension portion 129 of the gate line 121, theextension portion 179 of the data line 171, and the storage capacitorconductor 177 are formed by etching the passivation layer 180 or thepassivation layer 180 and the gate insulating layer 140 with aphotolithography process.

Finally, as shown in FIGS. 1 to 3, by performing a deposition processand a photolithography process in an IZO layer, an ITO layer, or thelike, a pixel electrode 190 that is connected to the drain electrode 175and the storage capacitor conductor 177 and contact assistants 81 and 82that are connected to extension portions 129 and 179 of the gate lineand the data line, respectively are formed.

In an exemplary embodiment of the present invention shown in FIGS. 1, 2,and 3, data metals 171, 175, and 177, the lower contact layer patterns161, 165, and 167, and semiconductors 151 and 157 are formed using onemask and in this process, the source electrode 173 and the drainelectrode 175 are separated, thereby simplifying a manufacturingprocess. When this manufacturing method is used, the semiconductors 151and 157 always exist under the data metals 171, 175, and 177. Aspreviously described, because a leakage current increases when thesemiconductor is exposed to backlight or so on, reliability of a TFT isdeteriorated and a display quality of a LCD is deteriorated when thesemiconductor is exposed to backlight. In order to prevent this problem,in an exemplary embodiment of the present invention, a portion of thesemiconductor 151 that is positioned toward the drain electrode 175 fromthe data line 171 constituting the TFT, such as the protruding portion154, and the drain electrode 175 are provided within an occupying areaof the gate line 121 including the gate electrode 124.

A TFT array panel according to another exemplary embodiment of thepresent invention will now be described.

FIG. 13 is a layout view of an exemplary TFT array panel according toanother exemplary embodiment of the present invention and FIG. 14 is aview illustrating an exemplary light mask pattern for using whenmanufacturing the exemplary TFT array panel shown in FIG. 13.

A layered structure of the ITT array panel shown in FIG. 13 issubstantially similar to the ITT array panel shown in FIGS. 1 to 3.

That is, the gate line 121 and the storage electrode line (not shown)are formed on the insulation substrate 110, the gate insulating layer140 is formed on the gate line 121 and the storage electrode line andthe insulation substrate 110, and the ohmic contact layer (not shown)and the semiconductor including the protruding portion 154 are formed onthe gate insulating layer 140. The data line 171, including the sourceelectrode 173, and the drain electrode 175 are formed on the ohmiccontact layer and the passivation layer (not shown) is formed on thedata line 171 and the drain electrode 175. The passivation layer has thecontact hole 185 for exposing the drain electrode 175, and the pixelelectrode 190 that is connected to the drain electrode 175 through thecontact hole 185 is formed on the passivation layer.

At this time, unlike the TFT array panel of FIGS. 1 to 3, the TFT arraypanel of FIG. 13 has a branch portion 191 which is a portion of thepixel electrode 190 extending toward the drain electrode 175 and thebranch portion 191 is connected to the drain electrode 175 through thecontact hole 185. Only the branch portion 191 in its layer of the TFTarray panel overlaps the gate electrode 124, such that other portions ofthe pixel electrode 190, not including the branch portion 191, do notoverlap the gate electrode 124.

The above-described configuration of the branch portion 191 is providedto prevent a flicker phenomenon due to a kick back voltage by reducing aparasitic capacitance that would otherwise be formed between the pixelelectrode 190 and the gate electrode 124. That is, in a case where anoverlapping area of the pixel electrode 190 and the gate electrode 124is wide, the parasitic capacitance formed between them is large. Whenthe parasitic capacitance formed between the pixel electrode 190 and thegate electrode 124 is large, a kick back voltage, which is a phenomenonthat a pixel electrode voltage drops depending on the gate voltage drop,is aggravated. Thus, the present embodiment is provided to prevent thephenomenon.

FIG. 14 shows an exemplary light blocking pattern of the exemplary lightmask for use in a process of forming the photosensitive film forsequentially depositing a gate insulating layer, a semiconductor layer,an ohmic contact layer, and a data metal layer on an insulationsubstrate in which the gate line 121 including the gate electrode 124 isformed and patterning all of the data metal layer, the ohmic contactlayer, and the semiconductor layer in a state where the photosensitivefilm is coated on the data metal layer.

As shown in FIG. 14, a slit pattern 751 is disposed between a lightblocking pattern 710 for the data line and a light blocking pattern 750for the drain electrode. In the illustrated embodiment, the slit pattern751 has a substantially L-shaped configuration and is equidistantlyspaced between the light blocking pattern 750 and the light blockingpattern 710. Here, the light blocking pattern 750 for the drainelectrode and the slit pattern 751 are disposed within an occupying areaof the gate line 121 including the gate electrode 124.

The TFT array panel according to another exemplary embodiment of thepresent invention will now be described.

FIG. 15 is a layout view of an exemplary TFT array panel according toanother exemplary embodiment of the present invention and FIG. 16 is aview illustrating an exemplary light mask pattern for using whenmanufacturing the exemplary TFT array panel of FIG. 15.

The TFT array panel of FIG. 15 has a substantially similar structure asthe TFT array panel of FIG. 13.

That is, the gate line 121 and the storage electrode line (not shown)are formed on the insulation substrate 110, the gate insulating layer140 is formed on the gate line 121 and the storage electrode line andthe insulation substrate 110, and the ohmic contact layer (not shown)and the semiconductor including the protruding portion 154 are formed onthe gate insulating layer 140. The data line 171 and the drain electrode175 are formed on the ohmic contact layer and the passivation layer (notshown) is formed on the data line 171 and the drain electrode 175 andthe gate insulating layer 140. The passivation layer has a contact hole185 for exposing the drain electrode 175 and the pixel electrode 190that is connected to the drain electrode 175 through the contact hole185 is formed on the passivation layer.

At this time, unlike the TFT array panel of FIG. 13, the TFT array panelof FIG. 15 does not have a source electrode protruding from the dataline 171, but has a drain electrode 175 including a protruding portionto increase a width that the drain electrode 175 faces the data line171. In this way, a channel width of the ITT is fully secured.

FIG. 16 shows an exemplary light blocking pattern of the exemplary lightmask for using in a process of forming the photosensitive film forsequentially depositing a gate insulating layer, a semiconductor layer,an ohmic contact layer, and a data metal layer on an insulationsubstrate in which the gate line 121 including the gate electrode 124 isformed and patterning all of the data metal layer, the ohmic contactlayer, and the semiconductor layer in a state where the photosensitivefilm is coated on the data metal layer.

As shown in FIG. 16, the slit pattern 751 is disposed between the lightblocking pattern 710 for the data line and the light blocking pattern750 for the drain electrode. In the illustrated embodiment, the slitpattern 751 is substantially linear shaped, and is equidistantly spacedbetween the light blocking pattern 710 and the light blocking pattern750. Here, the light blocking pattern 750 for the drain electrode andthe slit pattern 751 are disposed within an occupying area of the gateline 121 including the gate electrode 124.

The TFT array panel according to another exemplary embodiment of thepresent invention will now be described.

FIG. 17 is a layout view of an exemplary TFT array panel according toanother exemplary embodiment of the present invention and FIG. 18 is across-sectional view of the exemplary TFT array panel taken along lineXVIII-XVIII of FIG. 17.

A layered structure of the ITT array panel shown in FIGS. 17 and 18 issubstantially similar to the TFT array panel shown in FIGS. 1 to 3.

That is, the storage electrode line (not shown) and the gate line 121including the gate electrode 124 are formed on the insulation substrate110, the gate insulating layer 140 is formed on the gate line 121 andthe storage electrode line and the insulation substrate 110, and theohmic contact and the semiconductor including the protruding portion 154are formed on the gate insulating layer 140. The data line 171 and thedrain electrode 175 including the source electrodes 173 a and 173 b areformed on the ohmic contact and the passivation layer 180 is formed onthe data line 171 and the drain electrode 175 and on the gate insulatinglayer 140. The passivation layer 180 has the contact hole 185 forexposing the drain electrode 175 and the pixel electrode 190 that isconnected to the drain electrode 175 through the contact hole 185 isformed on the passivation layer 180.

At this time, unlike the TFT array panel shown in FIGS. 1 to 3, the TFTarray panel shown in FIGS. 17 and 18 has a branch portion 191 in whichthe pixel electrode 190 is extended toward the drain electrode 175 andthe branch portion 191 is connected to the drain electrode 175 throughthe contact hole 185. This is to prevent a flicker phenomenon due to akick back voltage by reducing a parasitic capacitance that is formedbetween the pixel electrode 190 and the gate electrode 124, aspreviously described with respect to FIG. 13.

Furthermore, source electrodes 173 a and 173 b are extended from thedata line 171 in two sections, the drain electrode 175 is disposedbetween the two source electrodes 173 a and 173 b, and the drainelectrode 175 is formed in an extended bar shape.

The protruding portion 154 of the semiconductor is extended to lieoutside a periphery of the source electrodes 173 a and 173 b and thedrain electrode 175. Therefore, there is an allowance area around thedrain electrode 175.

The contact hole 185 exposes an end of the drain electrode 175 that ispositioned further from the data line 171 among both ends of the drainelectrode 175 and exposes both of the drain electrode 175 and theprotruding portion 154 of the semiconductor around the drain electrode175. Therefore, the branch portion 191 of the pixel electrode 190 comesin contact with an upper surface and a side surface of the drainelectrode 175 and comes in contact with the exposed protruding portion154 of the semiconductor, as shown in FIG. 18.

If the branch portion 191 of the pixel electrode 190 comes in contactwith the upper surface and the side surface of the drain electrode 175,electrical contact between the pixel electrode 190 and the drainelectrode 175 can be strengthened. For this reason, the contact hole 185should be formed to expose the drain electrode 175 and surroundings ofthe drain electrode 175. At this time, an area that is exposed by thecontact hole 185 can be limited to an upper part of the semiconductorbecause the semiconductor is widely distributed around the drainelectrode 175. Because the semiconductor can fully increase etchingselectivity with the passivation layer 180 that is made of an insulatingmaterial, damage of the lower gate insulating layer 140 can be preventedby operating an etching interception layer when the passivation layer180 is etched so as to form the contact hole 185.

As in the above exemplary embodiments, the protruding portion 154 of thesemiconductor is overlapped with the gate electrode 124 and is formed tobe disposed within an occupying area of the gate line 121 including thegate electrode 124 in surfaces of the insulation substrate 110. That is,an edge of the protruding portion 154 of the semiconductor is providedwithin an area that is enclosed with an edge line of the gate line 121including the gate electrode 124. Therefore, when viewed from the lowerside of the insulation substrate 110, the protruding portion 154 is notexposed since it is covered with the gate electrode 124 and the gateline 121.

In the illustrated embodiment, the entire protruding portion 154 islimited in location to staying within the borders of the occupying areaof the gate electrode 124. Alternatively, the entire protruding portion154 of the semiconductor may not necessarily be provided within anoccupying area of the gate line 121 including the gate electrode 124.However, it is preferable that a channel portion, which is disposedbetween the data line 171 including the source electrodes 173 a and 173b and the drain electrode 175, a portion disposed under the drainelectrode 175, and portions adjacent to the portion disposed under thedrain electrode 175 are formed to be disposed within an occupying areaof the gate line 121 including the gate electrode 124. That is, it ispreferable that a semiconductor that is positioned toward the drainelectrode 175 from the data line 171 is provided within an occupyingarea of the gate line 121 including the gate electrode 124.

According to exemplary embodiments of the present invention, a leakagecurrent can be prevented from being generated by covering asemiconductor constituting the ITT with a gate metal layer andirradiating backlight in the semiconductor.

Furthermore, as a contact hole for connecting the pixel electrode andthe drain electrode is widely formed on the semiconductor, connectionbetween the pixel electrode and the drain electrode can be strengthened.

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A thin film transistor array panel comprising: aninsulation substrate; a gate line formed on the insulation substrate andincluding a gate electrode; a data line insulated from and intersectingthe gate line, and including a source electrode; a drain electrodedisposed opposite to the source electrode on the gate line; and asemiconductor formed in a layer between the data line and the gate line,the semiconductor having a protruding portion extending below the drainelectrode, wherein a portion of the semiconductor extending towards thedrain electrode, from an area occupied by the data line, is disposedwithin an occupying area of the gate line including the gate electrode.2. The thin film transistor array panel of claim 1, further comprising apixel electrode connected to the drain electrode.
 3. The thin filmtransistor array panel of claim 2, wherein the pixel electrode has abranch portion extended toward the drain electrode and the branchportion is connected to the drain electrode.
 4. The thin film transistorarray panel of claim 3, wherein only the branch portion of the pixelelectrode overlaps with the gate line.
 5. The thin film transistor arraypanel of claim 2, wherein the pixel electrode contacts an upper surfaceand a side surface of the drain electrode.
 6. The thin film transistorarray panel of claim 5, wherein the pixel electrode contacts thesemiconductor.
 7. A thin film transistor array panel comprising: aninsulation substrate; a gate line formed on the insulation substrate andincluding a gate electrode; a gate insulating layer formed on the gateline; a semiconductor stripe formed on the gate insulating layer, thesemiconductor stripe having a protruding portion; a data line formed onthe semiconductor stripe and intersecting the gate line, the data lineincluding a source electrode; a drain electrode formed on the protrudingportion of the semiconductor stripe; a passivation layer formed on thedata line and the drain electrode and having a contact hole exposing thedrain electrode; and a pixel electrode formed on the passivation layerand connecting to the drain electrode through the contact hole, whereina portion of the semiconductor stripe extending toward the drainelectrode, from an area occupied by the data line, is disposed within anoccupying area of the gate line including the gate electrode.
 8. Thethin film transistor array panel of claim 7, wherein the pixel electrodehas a branch portion extended toward the drain electrode and the branchportion is connected to the drain electrode.
 9. The thin film transistorarray panel of claim 8, wherein only the branch portion of the pixelelectrode overlaps with the gate line.
 10. The thin film transistorarray panel of claim 7, wherein the contact hole exposes the drainelectrode and portions of the semiconductor stripe around the drainelectrode.
 11. The thin film transistor array panel of claim 10, whereinthe pixel electrode contacts an upper surface and a side surface of thedrain electrode exposed through the contact hole.
 12. The thin filmtransistor array panel of claim 11, wherein the pixel electrode comes incontact with the portions of the semiconductor stripe that are exposedthrough the contact hole.
 13. The thin film transistor array panel ofclaim 12, wherein the pixel electrode has a branch portion and thebranch portion is connected to the drain electrode and thesemiconductor.
 14. The thin film transistor array panel of claim 13,wherein only some of the portions of the semiconductor stripe exposedthrough the contact hole are covered with the pixel electrode.
 15. Amethod of manufacturing a thin film transistor array panel, the methodincluding: forming a gate line and a gate electrode on an insulationsubstrate; forming a semiconductor layer and a data metal layer on thegate line and gate electrode on the insulation substrate; and, forming asemiconductor stripe and a protruding portion from the semiconductorlayer and a data line, source electrode, and drain electrode from thedata metal layer using one mask, wherein forming the semiconductorstripe and protruding portion includes forming the protruding portionwithin an area occupied by the gate line and gate electrode.
 16. Themethod of claim 15, further comprising forming an ohmic contact layerbetween the semiconductor layer and the data metal layer, and forming anohmic contact pattern from the ohmic contact layer using the one mask.